Semiconductor device

ABSTRACT

Provided is a semiconductor device including a DC/DC converter circuit, wherein the DC/DC converter circuit includes a transistor of a normally-off type, having a first drain electrode connected town input terminal and a first source electrode connected to an output terminal, which is formed in a first compound semiconductor substrate having a two-dimensional electron gas layer, and a transistor having a second drain electrode connected to the first source electrode and a grounded second source electrode.

This application is based on Japanese patent application No.2012-233481, the content of which is incorporated hereinto by reference.

BACKGROUND

Technical Field

The invention relates to a semiconductor device, and relates to, forexample, a technique applicable to a semiconductor device having a DC/DCconverter circuit.

Related Art

Techniques regarding a DC/DC converter circuit have been variouslyexamined, and include, for example, techniques disclosed in JapaneseUnexamined Patent Publication No. 2011-160651, Japanese UnexaminedPatent Publication No. 2006-223016, and PCT Japanese Translation PatentPublication No. 2006-521081.

The technique disclosed in Japanese Unexamined Patent Publication No.2011-160651 relates to a buck converter circuit in which a controlswitch and a synchronous switch have a depletion-mode group III nitrideswitch. In addition, Japanese Unexamined Patent Publication No.2011-160651 discloses the formation of a protection circuit which isconfigured so that a current does not flow through the control switchwhile a control circuit is not powered up.

Japanese Unexamined Patent Publication No. 2006-223016 discloses anon-isolated DC/DC converter in which a high-side switch is a galliumnitride element, PCT Japanese Translation Patent Publication No.2006-521081 discloses a DC/DC converter including a non-silicon basedswitching transistor.

In addition, the technique disclosed in PCT Japanese Translation PatentPublication No. 2005-525777 relates to a technique in which a switchingelement incorporated in a low-side arm of an inverter is a normally-onswitching element which allows electrical conduction when a controlvoltage is not applied.

In order to improve power source efficiency of a DC/DC convertercircuit, a reduction in the loss of a switching device constituting theDC/DC converter circuit is required. In order to achieve the reductionin the loss of the switching device, for example, a transistor providedin a compound semiconductor substrate having a two-dimensional electrongas layer may be adopted as the switching device.

On the other hand, when a through-current flows into a circuit in astate where power is not completely supplied to the DC/DC convertercircuit, there may be a concern of a transistor or the like constitutinga circuit being damaged. However, as disclosed in, for example, JapaneseUnexamined Patent Publication No. 2011-160651, when a protection circuitfor suppressing such a through-current is newly formed, there may be aconcern of a circuit being complicated.

Other problems and novel features will be made clearer from thedescription and the accompanying drawings of the present specification.

SUMMARY

In one embodiment, a first transistor constituting a DC/DC convertercircuit is a normally-off type which is connected to an input terminaland is formed in a first compound semiconductor substrate having atwo-dimensional electron gas layer.

According to the embodiment, it is possible to improve power sourceefficiency while achieving simplification of the DC/DC convertercircuit.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, advantages and features of the presentinvention will be more apparent from the following description ofcertain preferred embodiments taken in conjunction with the accompanyingdrawings, in which:

FIG. 1 is a circuit diagram illustrating a semiconductor deviceaccording to a first embodiment.

FIG. 2 is a cross-sectional view illustrating a configuration of ahigh-side transistor shown in FIG. 1.

FIG. 3 is a cross-sectional view illustrating a configuration of alow-side transistor shown in FIG. 1.

FIG. 4 is a plan view illustrating an example of the semiconductordevice according to the first embodiment.

FIGS. 5A and 5B are graphs illustrating I_(DS)-V_(DS) waveforms in anormally-off type transistor and a normally-on type transistor.

FIG. 6 is a timing diagram illustrating operations of the semiconductordevice according to the first embodiment.

FIG. 7 is a graph illustrating the power conversion efficiency of aDC/DC converter circuit.

FIG. 8 is a plan view illustrating a semiconductor device according to asecond embodiment.

FIGS. 9A and 9B are cross-sectional views illustrating the semiconductordevice shown in FIG. 8.

FIG. 10 is a cross-sectional view taken along line A-A′ of FIG. 8.

FIG. 11 is a cross-sectional view taken along line B-B′ of FIG. 8.

FIG. 12 is a plan view illustrating the semiconductor device shown inFIG. 8.

FIG. 13 is a cross-sectional view illustrating the semiconductor deviceshown in FIG. 12.

DETAILED DESCRIPTION

The invention will now be described herein with reference toillustrative embodiments. Those skilled in the art will recognize thatmany alternative embodiments can be accomplished using the teachings ofthe present invention and that the invention is not limited to theembodiments illustrated for explanatory purposes.

Hereinafter, embodiments of the invention will be described withreference to the accompanying drawings. In all the drawings, likeelements are referenced by like reference numerals and descriptionsthereof will not be repeated.

First Embodiment

FIG. 1 is a circuit diagram illustrating a semiconductor device SM1according to a first embodiment, and particularly illustrates aconfiguration of a DC/DC converter circuit CC1 included in thesemiconductor device SM1. FIG. 2 is a cross-sectional view illustratinga high-side transistor HT1 shown in FIG. 1. FIG. 3 is a cross-sectionalview illustrating a configuration of a low-side transistor LT1 shown inFIG. 1.

The semiconductor device SM1 includes the DC/DC converter circuit CC1.The DC/DC converter circuit CC1 includes the transistor HT1 and thetransistor LT1.

The transistor HT1 according to the present embodiment constitutes ahigh-side switching device in the DC/DC converter circuit CC1. For thisreason, the transistor HT1 includes a drain electrode DE1 connected toan input terminal IT1, and a source electrode SE1 connected to an outputterminal OT1.

In addition, the transistor HT1 is formed in a compound semiconductorsubstrate CS1 having a two-dimensional electron gas layer TD1. Further,the transistor HT1 is a normally-off type.

The transistor LT1 according to the present embodiment constitutes alow-side switching device in the DC/DC converter circuit CC1. For thisreason, the transistor LT1 includes a drain electrode DE2 connected tothe source electrode SE1 of the transistor HT1, and a grounded sourceelectrode SE2.

According to such a configuration, the transistor HT1 is formed in thecompound semiconductor substrate CS1 having the two-dimensional electrongas layer TD1, thereby allowing a switching device having a lower lossthan a silicon device to be realized. For this reason, it is possible toachieve an improvement in the power source efficiency of the DC/DCconverter circuit. In addition, the transistor HT1 connected to theinput terminal is configured to be a normally-off type, thereby allowingflow of a through-current into a circuit in a state where power is notcompletely supplied to the DC/DC converter circuit to be suppressed,without newly providing a protection circuit. Therefore, it is possibleto suppress complication of a circuit.

Therefore, according to the present embodiment, it is possible toimprove power source efficiency while achieving the simplification ofthe DC/DC converter circuit.

Hereinafter, the configuration of the semiconductor device SM1 will bedescribed in detail.

As shown in FIG. 1, the semiconductor device SM1 includes the DC/DCconverter circuit CC1. The DC/DC converter circuit CC1 according to thepresent embodiment is constituted by the transistor HT1, the transistorLT1, a diode DI1, an inductor IN1, a capacitor CA1, and a controlcircuit CT1.

The DC/DC converter circuit CC1 constitutes, for example, a step-downbuck converter.

The transistor HT1 constitutes a high-side switching device in the DC/DCconverter circuit CC1. For this reason, the drain electrode DE1 of thetransistor HT1 is connected to the input terminal IT1, and the sourceelectrode SE1 is connected to the output terminal OT1 through theinductor IN1.

In the semiconductor device SM1, a protection circuit for suppressingthe flow of a through-current into a circuit is not provided between thetransistor HT1 and the input terminal IT1. For this reason, it ispossible to suppress the complication of a circuit.

The transistor LT1 constitutes a low-side switching device in the DC/DCconverter circuit CC1. For this reason, the drain electrode DE2 of thetransistor LT1 is connected to the source electrode SE1 of thetransistor HT1, and the source electrode SE2 is grounded. In the presentembodiment, the drain electrode DE2 is connected to a path forconnecting the transistor HT1 to the inductor IN1. In addition, thesource electrode SE2 is connected to ground points ER1 and ER2.

The diode DI1 is connected in parallel with the transistor LT1. An anodeof the diode DI1 is connected to the ground points ER1 and ER2, and acathode thereof is connected to the transistor HT1 and the inductor IN1.

The inductor IN1 is configured such that one end thereof is connected tothe transistor HT1, and the other end on the side opposite to the oneend is connected to the output terminal OT1. The capacitor CA1 isconfigured such that one end thereof is connected to the inductor IN1and the output terminal OT1, and the other end on the side opposite tothe one end is grounded. The waveform of an output voltage is smoothedby the inductor IN1 and the capacitor CA1.

The control circuit CT1 is connected to a gate electrode GE1 of thetransistor HT1 and a gate electrode GE2 of the transistor LT1. Thereby,the turn-on and turn-off of the transistor HT1 and the transistor LT1constituting a switching device are controlled. In DC/DC convertercircuit CC1, it is possible to constantly maintain an output voltage byswitching an input voltage, and controlling a time ratio (duty ratio)between turn-on and turn-off.

The control circuit CT1 is constituted by, for example, a silicontransistor in which an impurity diffusion layer serving as a source anddrain region is formed in a silicon substrate. The transistorconstituting the control circuit CT1 is configured to be a silicondevice, thereby allowing manufacturing costs of the DC/DC convertercircuit CC1 including the control circuit CT1 to be reduced.

As shown in FIG. 2, the transistor HT1 is formed in the compoundsemiconductor substrate CS1 having the two-dimensional electron gaslayer TD1. In addition, the transistor HT1 is a normally-off typetransistor.

In the present embodiment, the compound semiconductor substrate CS1 isconstituted by a support substrate SB1, a buffer layer BF1, a compoundsemiconductor layer CL1, and a compound semiconductor layer CL2.

The support substrate SB1 is formed of, for example, Si, SiC, GaN, orsapphire. The buffer layer BF1 is provided on the support substrate SB1.The buffer layer BF1 in the present embodiment is, for example, aninsulating layer in which AlN and GaN are laminated in a multistagemanner by a metalorganic vapor phase epitaxy (MOVPE) method. Thethickness of the buffer layer BF1 is, for example, 1 μm.

The compound semiconductor layer CL1 is provided on the buffer layerBF1. The compound semiconductor layer CL1 is, for example, a GaN layer.The thickness of the compound semiconductor layer CL1 is, for example, 1μm.

The compound semiconductor layer CL2 is provided on the compoundsemiconductor layer CL1. As the compound semiconductor layer CL2, alayer having a hetero interface being formed with respect to thecompound semiconductor layer CL1 is selected. Thereby, thetwo-dimensional electron gas layer TD1 serving as a channel region ofthe transistor HT1 is formed on the interface between the compoundsemiconductor layer CL1 and the compound semiconductor layer CL2. In thepresent embodiment, the compound semiconductor layer CL2 is, forexample, an AlGaN layer, and particularly preferably anAl_(0.15)Ga_(0.85)N layer. The thickness of the compound semiconductorlayer CL2 is, for example, 10 nm.

The transistor HT1 has a recess gate structure. That is, a gate recessGR1 which is a recess is formed on the surface of the compoundsemiconductor substrate CS1. At least a portion of the gate electrodeGE1 is located within the gate recess GR1. Thereby, the electronconcentration in a channel portion is selectively reduced, therebyallowing the transistor HT1 to be formed as a normally-off typetransistor.

In the present embodiment, the gate recess GR1 is formed so as to passthrough the compound semiconductor layer CL2. In addition, the gaterecess GR1 may be formed so as to pass through the compoundsemiconductor layer CL2 and to embed a portion of the surface of thecompound semiconductor layer CL1 therein. Further, the gate recess GR1may be formed in the compound semiconductor layer CL2 so as not to passthrough the compound semiconductor layer CL2.

The transistor HT1 includes a gate insulating film GI1 provided on thecompound semiconductor layer CL2. The gate insulating film GI1 is formedon the compound semiconductor layer CL2, and on the inner wall of thegate recess GR1. For this reason, a recess is formed in a portion whichoverlaps the gate recess GR1 in the gate insulating film GI1 when seenin a plan view.

In the present embodiment, the gate insulating film GI1 is formed by,for example, a chemical vapor deposition (CVD) method. The gateinsulating film GI1 is formed of, for example, Al₂O₃. The thickness ofthe gate insulating film GI1 is, for example, 10 nm.

Meanwhile, an opening is formed by etching in a portion of the gateinsulating film GI1 in which the source electrode SE1 and the drainelectrode DE1 are formed.

The transistor HT1 includes the gate electrode GE1 provided on the gateinsulating film GI1. The gate electrode GE1 is formed at a positionoverlapping the gate recess GR1 when seen in a plan view. The gateelectrode GE1 is, for example, a laminated structure in which Ni and Auare laminated in order.

The gate recess GR1 and the gate electrode GE1 are provided so as to belocated between the source electrode SE1 and the drain electrode DE1.

The transistor HT1 includes the source electrode SE1 and the drainelectrode DE1. The source electrode SE1 and the drain electrode DE1 isprovided on the compound semiconductor layer CL2 so as to come intocontact with the compound semiconductor layer CL2. In the presentembodiment, the source electrode SE1 and the drain electrode DE1 areprovided in the opening formed in the gate insulating film GI1, and thusthe source electrode SE1 and the drain electrode DE1 come into contactwith the compound semiconductor layer CL2.

The source electrode SE1 and the drain electrode DE1 are formed of, forexample, one kind or two kinds or more kinds of metal materials selectedfrom Ti, Al, Mo, and Au.

The gate length of the transistor HT1 is, for example, 0.5 μm. Thedistance between the gate electrode GE1 and the drain electrode DE1 is,for example, 0.5 μm. The distance between the gate electrode GE1 and thesource electrode SE1 is, for example, 0.5 μm.

The threshold voltage of the transistor HT1 is, for example, 1.0 V. Thestrength voltage of the transistor HT1 is, for example, 40 V. Theon-resistance of the transistor HT1 is, for example, 10 mΩ.

The transistor HT1 has, for example, a polyimide film (not shown) as acover film that covers the gate electrode GE1, the source electrode SE1and the drain electrode DE1. The polyimide film is formed on the gateinsulating film GI1 so as to cover the gate electrode GE1, the sourceelectrode SE1 and the drain electrode DE1. In addition, an interconnectis formed on the polyimide film. The interconnect is formed of, forexample, Au.

The transistor HT1 having such a configuration is sealed in, forexample, the package of TO220.

FIGS. 5A and 5B are graphs illustrating I_(DS)-V_(DS) waveforms in anormally-off type transistor and a normally-on type transistor. FIG. 5Aillustrates I_(DS)-V_(DS) waveforms of the transistor HT1 which is anormally-off type transistor.

In FIG. 5A, I_(DS)-V_(DS) waveforms in gate voltages V_(GS) of 0 V, 2 V,4 V, 6 V, and 8 V are shown. As shown in FIG. 5A, when the gate voltageV_(GS) is 0 V without applying the gate voltage V_(GS), an on-statecurrent I_(DS) does not flow. In addition, when the gate voltage V_(GS)is applied, the on-state current I_(DS) flows in the transistor HT1. Inthis manner, it is known that the transistor HT1 according to thepresent embodiment functions as a normally-off type transistor.

The transistor HT1 is, for example, formed as follows.

First, the compound semiconductor substrate CS1 is formed by laminatingthe buffer layer BF1, the compound semiconductor layer CL1, and thecompound semiconductor layer CL2 in order on the support substrate SB1.

Next, the compound semiconductor layer CL2 is selectively removed byetching using a photoresist as a mask, and the gate recess GR1 isformed. Next, in order to eliminate damage in the etching process, wetetching is performed on the surface of the compound semiconductorsubstrate CS1 by an acid.

Next, the gate insulating film GI1 is formed on the compoundsemiconductor layer CL2 and on the inner wall of the gate recess GR1.The gate insulating film GI1 is formed by, for example, a CVD method.Next, the gate electrode GE1 is formed on the gate insulating film GI1and at a position overlapping the gate recess GR1 when seen in a planview.

Next, openings for burying the source electrode SE1 and the drainelectrode DE1 are formed in the gate insulating film GI1 by etchingusing a photoresist as a mask. Next, the source electrode SE1 and thedrain electrode DE1 are formed so as to bury the openings and to comeinto contact with the compound semiconductor layer CL2.

In this manner, the transistor HT1 is formed.

As shown in FIG. 3, the transistor LT1 according to the presentembodiment is formed in a compound semiconductor substrate CS2 having atwo-dimensional electron gas layer TD2. In addition, the transistor LT1is a normally-on type transistor.

In the present embodiment, since the transistor LT1 is formed in thecompound semiconductor substrate CS2 having a two-dimensional electrongas layer, it is possible to realize a switching device having a lowerloss than a silicon device. In addition, the transistor LT1 isconfigured to be a normally-on type, thereby allowing the on-resistanceof the transistor LT1 to be reduced. For this reason, a lower-lossswitching device is realized. Therefore, with such a configurationaccording to the present embodiment, it is possible to further improvethe power source efficiency of the DC/DC converter circuit.

Meanwhile, the transistor LT1 may be, for example, a silicon devicehaving an impurity diffusion layer constituting a source and drainregion and a channel region formed in a silicon substrate. Thetransistor LT1 is configured to be a silicon device, thereby allowingmanufacturing costs of the transistor LT1 to be reduced. In addition,the transistor LT1 is configured to be a silicon device, therebyallowing formation of the DC/DC converter circuit CC1 to be facilitated.

In the present embodiment, the compound semiconductor substrate CS2 isconstituted by a support substrate SB2, a buffer layer BF2, a compoundsemiconductor layer CL3, and a compound semiconductor layer CL4. Thesupport substrate SB2, the buffer layer BF2, the compound semiconductorlayer CL3, and the compound semiconductor layer CL4 have the sameconfigurations as, for example, those of the support substrate SB1, thebuffer layer BF1, the compound semiconductor layer CL1, and the compoundsemiconductor layer CL2, respectively.

The transistor LT1 has a planer gate structure. That is, a gate recessis not provided in the surface of the compound semiconductor substrateCS2. Thereby, the transistor LT1 can be configured to be a normally-ontype transistor. In this case, it is possible to form a hetero-junctionon the entire interface between the compound semiconductor layer CL3 andthe compound semiconductor layer CL4, and to realize high electrondensity in a channel portion. Therefore, it is possible to reduce anon-resistance in the transistor LT1, and to achieve a reduction in theloss of a switching device.

In the present embodiment, a gate recess is not provided in the surfaceof the compound semiconductor substrate CS2. For this reason, a portionwhich overlaps the gate electrode GE2 in the compound semiconductorlayer CL4 when seen in a plan view and other portions become equal toeach other, for example, in film thickness.

The transistor LT1 includes a gate insulating film GI2 provided on thecompound semiconductor layer CL4. The gate insulating film GI2 is formedon the compound semiconductor layer CL4. The gate insulating film GI2has the same configuration as, for example, that of the gate insulatingfilm GI1.

In addition, the transistor LT1 includes the gate electrode GE2 providedon the gate insulating film GI2. The gate electrode GE2 is provided soas to be located between the source electrode SE1 and the drainelectrode DE1. The gate electrode GE2 has the same configuration as, forexample, that of the gate electrode GE1. Meanwhile, in the presentembodiment, a recess which does not pass through the gate insulatingfilm GI2 may be formed in a portion of the gate insulating film GI2 inwhich the gate electrode GE2 is provided. In this case, the gateelectrode GE2 is formed so as to bury the recess.

The transistor LT1 includes the source electrode SE2 and the drainelectrode DE2. The source electrode SE2 and the drain electrode DE2 areprovided on the compound semiconductor layer CL4 so as to come intocontact with the compound semiconductor layer CL4. The source electrodeSE2 and the drain electrode DE2 have the same configurations as, forexample, those of the source electrode SE1 and the drain electrode DE1.

The gate length of the transistor LT1 is, for example, 0.5 μm. Thedistance between the gate electrode GE2 and the drain electrode DE2 is,for example, 0.5 μm.

The threshold voltage of the transistor LT1 is, for example, −4.0 V. Thestrength voltage of the transistor LT1 is, for example, 40 V. Theon-resistance of the transistor LT1 is, for example, 1.2 mΩ. Thetransistor LT1 is configured to be a normally-on type transistor,thereby allowing the on-resistance of the transistor LT1 to be set to alow value as mentioned above. Thereby, it is possible to form a low-lossswitching device.

The transistor LT1 includes, for example, a polyimide film (not shown)as a cover film that covers the gate electrode GE2, the source electrodeSE2 and the drain electrode DE2. The polyimide film is formed on thegate insulating film GI2 so as to cover the gate electrode GE2, thesource electrode SE2 and the drain electrode DE2. In addition, aninterconnect is formed on the polyimide film. The interconnect is formedof, for example, Au.

The transistor LT1 such a configuration is sealed in, for example, thepackage of TO220.

FIG. 5B illustrates I_(DS)-V_(DS) waveforms of the transistor LT1 whichis a normally-on type transistor.

In FIG. 5B, I_(DS)-V_(DS) waveforms in the gate voltage V_(GS) of −4 V,−2 V, 0 V, 2 V, and 4 V are shown. As shown in FIG. 5B, when the gatevoltage V_(GS) is 0 V without applying the gate voltage V_(GS), theon-state current I_(DS) flows in the transistor LT1. In addition, whenthe gate voltage V_(GS) is set to −4 V, the on-state current I_(DS) canbe caused not to flow. As stated above, it is known that the transistorLT1 according to the present embodiment functions as a normally-on typetransistor.

In the present embodiment, for example, the gate voltage V_(GS) of thetransistor LT1 is set to 0 V when a low-side switching device is set tobe in an off-state, and the gate voltage V_(GS) of the transistor LT1 isset to 5 V when the device is set to be in an on-state. Thereby, it ispossible to secure the operation reliability of the DC/DC convertercircuit CC1 while sufficiently reducing an on-resistance in an on-state.

The transistor LT1 is, for example, formed as follows.

First, the compound semiconductor substrate CS2 is formed by laminatingthe buffer layer BF2, the compound semiconductor layer CL3, and thecompound semiconductor layer CL4 in order on the support substrate SB2.Next, the gate insulating film GI2 is formed on the compoundsemiconductor layer CL4. The gate insulating film GI2 is formed by, forexample, a CVD method. Next, the gate electrode GE2 is formed on thegate insulating film GI2. Next, openings for burying the sourceelectrode SE2 and the drain electrode DE2 are formed in the gateinsulating film GI2 by etching using a photoresist as a mask. Next, thesource electrode SE2 and the drain electrode DE2 are formed so as tobury the openings and to come into contact with the compoundsemiconductor layer CL4. In this manner, the transistor LT1 is formed.

FIG. 4 is a plan view illustrating an example of the semiconductordevice SM1 according to the present embodiment.

In the present embodiment, a high-side switching device HD1 constitutedby the transistor HT1 and a low-side switching device LD1 constituted bythe transistor LT1 can be mounted to the same semiconductor package. Inthis case, the high-side switching device HD1 is mounted onto one regionof a lead frame LF1, and the low-side switching device LD1 is mountedonto the other region separated from the one region.

For example, the high-side switching device HD1 and the low-sideswitching device LD1 which are mounted onto the lead frame LF1 aresealed by a sealing resin or the like, and thus a semiconductor packageis formed.

In this case, the transistor HT1 and the transistor LT1 constitutesemiconductor chips different from each other.

The connection of each electrode to the lead frame LF1 or an outer leadOL1 is performed as follows using, for example, a bonding wire BW1.

In the transistor HT1 constituting the high-side switching device HD1,one of the source electrode SE1 and the drain electrode DE1 is connectedto the lead frame LF1, and the other thereof is connected to the outerlead OL1. In addition, the gate electrode GE1 is connected to the outerlead OL1. In the transistor LT1 constituting the low-side switchingdevice LD1, one of the source electrode SE2 and the drain electrode DE2is connected to the lead frame LF1, and the other thereof is connectedto the outer lead OL1. In addition, the gate electrode GE2 is connectedto the outer lead OL1.

FIG. 6 is a timing diagram illustrating operations of the semiconductordevice SM1 according to the present embodiment. In FIG. 6, a gatevoltage V_(GS), an on-state current I_(D), and a drain voltage V_(DS) ineach of the transistor HT1 and the transistor LT1, and a current I_(F)flowing in the diode DI1 are shown.

As shown in FIG. 6, in the DC/DC converter circuit CC1 according to thepresent embodiment, the on-time of the transistor LT1 can be made largerthan the on-time of the transistor HT1. Meanwhile, the term “on-time” asused herein means a time for which, when a switching device constitutedby a transistor is in an on-state, the on-state current I_(D) flows inthe transistor.

In addition, the transistor LT1, which is a normally-on type transistor,has a smaller loss due to an on-resistance than the transistor HT1,which is a normally-off type transistor, does.

For this reason, the transistor LT1 is configured to be a normally-ontype, and the on-time of the transistor LT1 is made larger than theon-time of the transistor HT1, thereby allowing a reduction in the lossof a switching device to be achieved more efficiently.

FIG. 7 is a graph illustrating the power conversion efficiency of theDC/DC converter circuit CC1.

FIG. 7 shows results obtained by actually measuring power conversionefficiency (%) when the DC/DC converter circuit is brought intooperation as a frequency of 2 MHz, V_(in)=12V, and V_(out)=1.1 V. InFIG. 7, the power conversion efficiency (%) is shown as values to outputcurrents I_(out)(A).

On the other hand, a first example will be shown in which a normally-offtype transistor is used as the high-side transistor HT1, and anormally-on type transistor is used as the low-side transistor HT1. Onthe other hand, a second example will be shown in which a normally-offtype transistor is used in both the high-side transistor HT1 and thelow-side transistor HT1. Here, a transistor having a structure shown inFIG. 2 is used as a normally-off type transistor, and a transistorhaving a structure shown in FIG. 3 is used as a normally-on typetransistor.

As shown in FIG. 7, in the first example, it is known that an efficiencyof approximately 1.5% is improved at the time of a peak, compared to thesecond example. In addition, in the first example, it is known that anefficiency of approximately 6% is improved when I_(out)=30 A, comparedto the second example.

In this manner, it is known that the transistor HT1 is configured to bea normally-off type, and the transistor LT1 is configured to be anormally-on type, thereby allowing a further reduction in the loss of aswitching device to be achieved while avoiding the complication of acircuit.

Next, an effect of the present embodiment will be described.

According to the present embodiment, the transistor HT1 constituting theDC/DC converter circuit CC1 is a normally-off type which is connected tothe input terminal IT1 and is formed in the compound semiconductorsubstrate CS1 having the two-dimensional electron gas layer TD1. Thetransistor HT1 is formed in the compound semiconductor substrate CS1having the two-dimensional electron gas layer TD1, thereby allowing aswitching device having a lower loss than a silicon device does to berealized. Therefore, it is possible to achieve an improvement in thepower source efficiency of the DC/DC converter circuit. In addition, thetransistor HT1 connected to the input terminal is configured to be anormally-off type, and thus it is possible to suppress the flow of athrough-current into a circuit in a state where power is not completelysupplied to the DC/DC converter circuit, without providing a protectioncircuit newly. Therefore, it is possible to suppress the complication ofa circuit.

Therefore, it is possible to improve power source efficiency whileachieving the simplification of the DC/DC converter circuit.

Second Embodiment

FIG. 8 is a plan view illustrating a semiconductor device SM2 accordingto a second embodiment. FIG. 8 shows a positional relationship betweenthe gate electrode GE1, the gate electrode GE2, the source electrodeSE1, the source electrode SE2, the drain electrode DE1, and the drainelectrode DE2. Meanwhile the positional relationship therebetween is notlimited to those shown in FIG. 8.

FIGS. 9A and 9B are cross-sectional views illustrating the semiconductordevice SM2 shown in FIG. 8. FIG. 9A shows cross-section C-C′ of FIG. 8.In addition, FIG. 9B shows cross-section D-D′ of FIG. 8.

In the semiconductor device SM2 according to the present embodiment, thetransistor HT1 and the transistor LT1 are provided in the same compoundsemiconductor substrate CS1.

As shown in FIG. 8 and FIGS. 9A and 9B, the transistor HT1 and thetransistor LT1 are all provided in the compound semiconductor substrateCS1. Except for this point, the configurations of the transistor HT1 andthe transistor LT1 in the present embodiment can be configured to be thesame as those in the first embodiment.

FIG. 10 is a cross-sectional view taken along line A-A′ of FIG. 8. FIG.11 is a cross-sectional view taken along line B-B′ of FIG. 8.

As shown in FIGS. 10 and 11, an element isolation film EL1 is formed inthe compound semiconductor substrate CS1. The transistor HT1 and thetransistor LT1 are respectively electrically isolated from othertransistors by the element isolation film EL1. In the presentembodiment, the transistor HT1 and the transistor LT1 are electricallyisolated from each other by the element isolation film EL1. The elementisolation film EL1 is formed, for example, so as to pass through thecompound semiconductor layer CL2 and the compound semiconductor layerCL1 and to reach the buffer layer BF1. In addition, the elementisolation film EL1 is formed by performing, for example, ionimplantation of boron into the compound semiconductor substrate CS1.This ion implantation is performed, for example, under the conditions ofan implantation energy of 120 keV and a dose amount of 2×10¹⁴ cm⁻².

The transistor HT1 and the transistor LT1 according to the presentembodiment are, for example, formed as follows.

First, as is the case with the first embodiment, the compoundsemiconductor substrate CS1 is formed. Next, the compound semiconductorlayer CL2 is selectively removed by etching using a photoresist as amask, and the gate recess GR1 is formed. Next, boron is ion-implantedinto the compound semiconductor substrate CS1, and the element isolationfilm EL1 is formed. Next, the gate insulating film GI1 and gateinsulating film GI2 are formed on the compound semiconductor layer CL2and on the inner wall of the gate recess GR1. The gate insulating filmGI1 and the gate insulating film GI2 are formed integrally with eachother by the same process. Next, a conductive film formed on the gateinsulating film GI1 and the gate insulating film GI2 is patterned, andthe gate electrode GE1 and the gate electrode GE2 are formed. At thistime, the gate electrode GE1 is formed at a position overlapping thegate recess GR1 when seen in a plan view, and the gate electrode GE2 isformed at position separated from the gate electrode GE1.

Next, openings for burying the source electrode SE1 and the drainelectrode DE1 are formed in the gate insulating film GI1 and openingsfor burying the source electrode SE2 and the drain electrode DE2 areformed in the gate insulating film GI2 by etching using a photoresist asa mask. Next, the source electrode SE1, the drain electrode DE1, thesource electrode SE2, and the drain electrode DE2 are formed so as tobury these openings and to come into contact with the compoundsemiconductor layer CL2.

In the present embodiment, as mentioned above, each configuration of thetransistor HT1 and the transistor LT1 can be formed by a common process.For this reason, it is possible to achieve a reduction in a number ofmanufacturing processes.

As shown in FIG. 8, the semiconductor device SM2 includes a plurality ofgate electrodes GE1. Each of the gate electrodes GE1 extends in a firstdirection. In addition, each of the gate electrodes GE1 is arranged soas to be separated from each other in a second direction perpendicularto the first direction in the plane surface of the compoundsemiconductor substrate CS1. One end of each gate electrode GE1 isconnected to the gate interconnect GL1 extending in the seconddirection. For this reason, the plurality of gate electrodes GE1 and thegate interconnect GL1 form a comb-teeth shape. One end of the gateinterconnect GL1 is connected to a gate pad GP1. Each of the gateelectrodes GE1 is connected to the control circuit CT1 through the gatepad GP1. Here, the first direction denotes a vertical direction in FIGS.9A and 9B, and the second direction denotes a horizontal direction inFIGS. 9A and 9B.

In addition, the semiconductor device SM2 includes a plurality of gateelectrodes GE2 Each of the gate electrodes GE2 extends in the firstdirection. In addition, each of the gate electrodes GE2 is arranged inthe second direction so as to be separated from each other. One end ofeach gate electrode GE2 is connected to the gate interconnect GL2extending in the second direction. For this reason, the plurality ofgate electrodes GE2 and the gate interconnect GL2 form a comb-teethshape. One end of the gate interconnect GL2 is connected to a gate padGP2. Each of the gate electrodes GE2 is connected to the control circuitCT1 through the gate pad GP2.

As shown in FIGS. 10 and 11, the gate interconnect GL1 and the gateinterconnect GL2 are disposed on, for example, the element isolationfilm EL1. In the present embodiment, the gate interconnect GL1 and thegate interconnect GL2 are formed on the element isolation film EL1through an insulating film IF3 which is formed by the same process asthat of forming the gate insulating film GI1 and the gate insulatingfilm GI2. In addition, the upper surfaces and the lateral sides of thegate interconnect GL1 and the gate interconnect GL2 are covered by, forexample, an insulating film IF1.

The semiconductor device SM2 includes a plurality of source electrodesSE1. Each of the source electrodes SE1 extends in the first direction.In addition, each of the source electrodes SE1 is arranged in the seconddirection so as to be separated from each other. One end of each sourceelectrode SE1 is connected to a source pad SP1. For example, the sourceelectrode SE1 and the source pad SP1 may be formed so that the pluralityof source electrodes SE1 and the source pad SP1 form a comb-teeth shapeintegrally.

In addition, the semiconductor device SM2 includes a plurality of drainelectrodes DE1. Each of the drain electrodes DE1 extends in the firstdirection. In addition, each of the drain electrodes DE1 is arranged inthe second direction so as to be separated from each other. One end ofeach drain electrode DE1 is connected to a drain pad DP1. For example,the drain electrode DE1 and the drain pad PD1 may be formed so that theplurality of drain electrodes DE1 and the drain pad DP1 form acomb-teeth shape integrally.

Meanwhile, the plurality of source electrodes SE1 and the plurality ofdrain electrodes DE1 are formed, for example, so that the sourceelectrode SE1 and the drain electrode DE1 are alternately arranged. Inaddition, the gate electrode GE1 is disposed, for example, between thesource electrode SE1 and the drain electrode DE1. In this case, thetransistor HT1 is formed by the source electrode SE1 and the drainelectrode DE1 adjacent to each other and the gate electrode GE1 disposedtherebetween. Meanwhile, the drain pad DP1 is provided, for example, soas to be located on the side opposite to the source pad SP1 when seenfrom a region in which the source electrode SE1 and the drain electrodeDE1 are arranged.

The semiconductor device SM2 includes a plurality of source electrodesSE2. Each of the source electrodes SE2 extends in the first direction.In addition, each of the source electrodes SE2 is arranged in the seconddirection so as to be separated from each other. One end of each sourceelectrode SE2 is connected to a source pad SP2 For example, the sourceelectrode SE2 and the source pad SP2 may be formed so that the pluralityof source electrodes SE2 and the source pad SP2 form a comb-teeth shapeintegrally.

In addition, the semiconductor device SM2 includes a plurality of drainelectrodes DE2. Each of the drain electrodes DE2 extends in the firstdirection. In addition, each of the drain electrodes DE2 is arranged inthe second direction so as to be separated from each other. One end ofeach drain electrode DE2 is connected to a drain pad DP2. For example,the drain electrode DE2 and the drain pad DP2 may be formed so that theplurality of drain electrodes DE2 and the drain pad DP2 form acomb-teeth shape integrally. In addition, the drain pad DP2 may beformed integrally with the source pad SP1.

Meanwhile, the plurality of source electrodes SE2 and the plurality ofdrain electrodes DE2 are formed, for example, so that the sourceelectrode SE2 and the drain electrode DE2 are alternately arranged. Inaddition, the gate electrode GE2 is disposed, for example, between thesource electrode SE2 and the drain electrode DE2. In this case, thetransistor LT1 is formed by the source electrode SE2 and the drainelectrode DE2 adjacent to each other and the gate electrode GE2 disposedtherebetween. Meanwhile, the drain pad DP2 is provided, for example, soas to be located on the side opposite to the source pad SP2 from aregion in which the source electrode SE2 and the drain electrode DE2 arearranged.

As shown in FIG. 10, the source electrode SE1 is provided, for example,on the compound semiconductor layer CL2 and on the gate interconnectGL1. At this time, the source electrode SE1 is provided on the gateinterconnect GL1 through the insulating film IF1. In addition, thesource electrode SE1 is electrically isolated from the drain pad DP1 byan insulating film IF2. The source electrode SE2 is provided, forexample, on the compound semiconductor layer CL2 and on the gateinterconnect GL2. At this time, the source electrode SE2 is provided onthe gate interconnect GL2 through the insulating film IF1. In addition,the source electrode SE2 is electrically isolated from the drain pad DP2by the insulating film IF2.

As shown in FIG. 11, the drain electrode DE1 and the drain electrode DE2are formed on the compound semiconductor layer CL2. In addition, thedrain electrode DE1 and the drain electrode DE2 are electricallyisolated from the gate interconnect GL1 and the gate interconnect GL2,respectively, by the insulating film IF1.

FIG. 12 is a plan view illustrating the semiconductor device SM2 shownin FIG. 8, and illustrates a state where the compound semiconductorsubstrate CS1 is mounted on the substrate CB1. FIG. 13 is across-sectional view illustrating the semiconductor device SM2 shown inFIG. 12.

In the example shown in FIGS. 12 and 13, the semiconductor device SM2 isconfigured such that the compound semiconductor substrate CS1 having thehigh-side switching device HD1 and the low-side switching device LD1formed therein is mounted on the substrate CB1. Meanwhile, the substrateCB1 is, for example, an interconnect substrate such as an interposer ora motherboard.

In the present embodiment, the high-side switching device HD1 and thelow-side switching device LD1, and the source pad SP1, the source padSP2, the drain pad DP1, the drain pad DP2, the gate pad GP1, and thegate pad GP2 are formed, for example, on the compound semiconductorsubstrate CS1. The gate pad GP1 and the gate pad GP2 are connected tothe substrate CB1 by, for example, a wire bonding.

Meanwhile, in FIG. 12, the gate interconnect GL1, the gate interconnectGL2, the gate electrode GE1, the gate electrode GE2, the sourceelectrode SE1, the drain electrode DE1, the source electrode SE2, andthe drain electrode DE2 are omitted.

A frame FL1 is formed on the substrate CB1. The compound semiconductorsubstrate CS1 is mounted on, for example, the frame FL1 formed on thesubstrate CB1. The source pad SP1, the source pad SP2, the drain pad DP1and the drain pad DP2, and the frame FL1 are connected through, forexample, a clip CP1. The clip CP1 is, for example, a copper plate clip.Each of the pads and the clip CP1 are bonded to each other by, forexample, a solder.

In the present embodiment, as mentioned above, the clip CP1 is used forthe connection of the substrate CB1 to the high-side switching deviceHD1 and the low-side switching device LD1. For this reason, it ispossible to reduce inductance and to obtain a semiconductor deviceexcellent in a high frequency operation.

A semiconductor package is obtained by sealing the frame FL1, the clipCP1, the compound semiconductor substrate CS1 and the like, provided onthe substrate CB1, using a sealing resin.

In the present embodiment, the high-side switching device HD1 and thelow-side switching device LD1 are formed within, for example, onesemiconductor chip. Thereby, it is possible to achieve a reduction inthe size of a semiconductor device. Meanwhile, the high-side switchingdevice HD1 and the low-side switching device LD1 may be formed withinsemiconductor chips different from each other.

The control circuit CT1 is formed within, for example, a semiconductorchip (hereinafter, also referred to as a second semiconductor chip)different from a semiconductor chip (hereinafter, also referred to as afirst semiconductor chip) including the high-side switching device HD1and the low-side switching device LD1.

The second semiconductor chip is mounted on, for example, the samesubstrate CB1 as the first semiconductor chip. In this case, the firstsemiconductor chip and the second semiconductor chip are all sealed by asealing resin and constitute one semiconductor package. Thereby, it ispossible to achieve a reduction in the size of a semiconductor device.

Meanwhile, the second semiconductor chip may be mounted on a substratedifferent from the substrate CB1 on which the first semiconductor chipis mounted.

In the present embodiment, it is possible to obtain the same effect asin the first embodiment.

As stated above, while the invention devised by the inventor has beendescribed specifically based on the embodiments thereof, the presentinvention is not limited to the above-mentioned embodiments, but it goeswithout saying that various changes and modifications may be madewithout departing from the scope of the invention.

It is apparent that the present invention is not limited to the aboveembodiment, and may be modified and changed without departing from thescope and spirit of the invention.

What is claimed is:
 1. A semiconductor device including a DC/DCconverter circuit, the semiconductor device comprising: a substratehaving a main surface including a first region, a second region, and athird region arranged between the first region and the second region; afirst frame formed in the first region over the substrate; a secondframe formed in the second region over the substrate; a third frameformed in the third region over the substrate; a compound semiconductorsubstrate having a first surface and a second surface opposite the firstsurface, wherein the compound semiconductor substrate has a first side,a second side opposite the first side, and a third side between thefirst side and the second side, and wherein the compound semiconductorsubstrate is mounted on the third frame so as to face the second surfaceto the main surface of the substrate; a first pad formed over the firstsurface and arranged along the first side; a second pad formed over thefirst surface and arranged along the second side; a third pad formedover the first surface and arranged between the first pad and the secondpad; a first transistor constituting a part of the DC/DC convertercircuit and formed in the compound semiconductor substrate; and a secondtransistor constituting a part of the DC/DC converter circuit and formedin the compound semiconductor substrate, wherein the first transistorincludes a first gate electrode, a first gate insulating film, a firstsource electrode and a first drain electrode and is arranged between thefirst pad and the third pad in plan view, wherein the second transistorincludes a second gate electrode, a second gate insulating film, asecond source electrode and a second drain electrode and is arrangedbetween the second pad and the third pad in a planar view, wherein thefirst drain electrode is connected to the first pad, wherein the firstsource electrode and the second drain electrode are connected to thethird pad, wherein the second source electrode is connected to thesecond pad, wherein the first frame is arranged along the first side ofthe compound semiconductor substrate, wherein the second frame isarranged along the second side of the compound semiconductor substrate,wherein the third frame has a first portion, over which the compoundsemiconductor substrate is arranged, and a second portion, which isexposed from the compound semiconductor substrate, and is arranged alongthe third side, wherein the first pad is connected to the first framethrough a first clip, wherein the second pad is connected to the secondframe through a second clip, and wherein the third pad is connected tothe second portion of the third frame through a third clip.
 2. Asemiconductor device according to the claim 1, wherein the compoundsemiconductor substrate has a GaN layer and an AlGaN layer provided overthe GaN layer.
 3. A semiconductor device according to the claim 2,wherein a part of the first gate electrode is located within a recessformed in the compound semiconductor substrate, and wherein the secondgate electrode has a planer gate structure.
 4. A semiconductor deviceaccording to the claim 3, wherein the first transistor is a normally-offtype, and wherein the second transistor is a normally-on type.
 5. Asemiconductor device according to the claim 2, wherein each of thefirst, second and third clips includes copper.
 6. A semiconductor deviceaccording to the claim 5, wherein the first, second and third pad arerespectively bonded to the first, second and third clips by solder.